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1 www.irf.com ? 2013 international rectifier april 16, 2013 base part number package type standard pack orderable part number form quantity IRG7PSH54K10DPBF super-247 tube 25 IRG7PSH54K10DPBF absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 120 a ? i c @ t c = 100c continuous collector current 65 i cm pulse collector current, v ge =20v 200 i lm clamped inductive load current, v ge =20v ? 200 i f @ t c = 25c diode continuous forward current 50 i f @ t c = 100c diode continuous forward current 25 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 520 w p d @ t c = 100c maximum power dissipation 210 t j operating junction and -40 to +150 c t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ? jc (igbt) thermal resistance junction-to-case-(each igbt) ? ??? ??? 0.24 c/w r ? cs thermal resistance, case-to-sink (f lat, greased surface) ??? 0.24 ??? r ? ja thermal resistance, junction-to-ambient (typical socket mount) ??? ??? 40 r ? jc (diode) thermal resistance junction-to-case-(each diode) ? ??? ??? 0.70 v ces = 1200v i c = 65a, t c =100c t sc ?? 10s, t j(max) = 150c v ce(on) typ. = 1.9v @ i c = 50a g c e gate collector emitter applications ? industrial motor drive ? ups ? solar inverters ? welding features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 10s short circuit soa square rbsoa maximum junction temperature 150c increased reliability positive v ce (on) temperature coefficient excellent current sharing in parallel operation rugged transient performance ? IRG7PSH54K10DPBF insulated gate bipolar transistor with ultrafast soft recovery diode ? ? ? IRG7PSH54K10DPBF ? e g n-channel c g c e http://www..net/ datasheet pdf - http://www..net/
2 www.irf.com ? 2013 international rectifier april 16, 2013 ? IRG7PSH54K10DPBF electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 250a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.3 ? v/c v ge = 0v, i c = 5ma (25c-150c) v ce(on) collector-to-emitter saturation voltage ? 1.9 2.4 v i c = 50a, v ge = 15v, t j = 25c ? 2.4 ? i c = 50a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 5.0 ? 7.5 v v ce = v ge , i c = 2.4ma ? v ge(th) / ? t j threshold voltage te mperature coeff. ? -15 ? mv/c v ce = v ge , i c = 2.4ma (25c-150c) gfe forward transconductance ? 36 ? s v ce = 50v, i c = 50a, pw = 20s i ces collector-to-emitter leakage current ? 1.0 45 a v ge = 0v, v ce = 1200v ? 1800 ? v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current ? ? 200 na v ge = 30v v f ? diode forward voltage drop ? ? 2.5 3.5 i f = 16a ? 2.1 ? i f = 16a, t j = 150c switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max ? units conditions q g total gate charge (turn-on) ? 290 435 nc i c = 50a q ge gate-to-emitter charge (turn-on) ? 60 90 v ge = 15v q gc gate-to-collector charge (turn-on) ? 130 195 v cc = 600v e on turn-on switching loss ? 4.8 5.7 mj ? i c = 50a, v cc = 600v, v ge =15v r g = 5 ? , t j = 25c energy losses include tail & diode reverse recovery ?? e off turn-off switching loss 2.8 3.7 e total total switching loss ? 7.6 ? 9.4 ? t d(on) turn-on delay time ? 110 130 ns ? t r rise time ? 80 105 t d(off) turn-off delay time ? 490 520 t f fall time ? 70 90 e on turn-on switching loss ? 6.8 ? mj ? i c = 50a, v cc = 600v, v ge =15v r g = 5 ? , t j = 150c energy losses include tail & diode reverse recovery ?? ? e off turn-off switching loss ? 4.7 ? e total total switching loss 11.5 t d(on) turn-on delay time ? 85 ? ns t r rise time ? 90 ? t d(off) turn-off delay time ? 490 ? t f fall time ? 290 ? c ies input capacitance ? 5700 ? v ge = 0v c oes output capacitance ? 290 ? pf v cc = 30v c res reverse transfer capacitance ? 150 ? f = 1.0mhz rbsoa reverse bias safe operating area t j = 150c, i c = 200a full square v cc = 960v, vp 1200v v ge = +20v to 0v scsoa ? short circuit safe operating area ? 10 ? ? ? ? ? s ? t j = 150c,v cc = 600v, vp 1200v v ge = +15v to 0v erec reverse recovery energy of the diode ? 640 ? j t j = 150c t rr diode reverse recovery time ? 170 ? ns v cc = 600v, i f = 16a i rr peak reverse recovery current ? 25 ? a v ge = 15v, rg = 5 ? v notes: ? v cc = 80% (v ces ), v ge = 20v ? r ? is measured at t j of approximately 90c. ? refer to an-1086 for guidelines for measuring v (br)ces safely. ? maximum limits are based on statistical sample size characterization. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement . http://www..net/ datasheet pdf - http://www..net/
3 www.irf.com ? 2013 international rectifier april 16, 2013 ? IRG7PSH54K10DPBF fig. 5- reverse bias soa t j = 150c; v ge = 20v 0.1 1 10 100 f , frequency ( khz ) 0 20 40 60 80 100 120 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tcase = 100c gate drive as specified power dissipation = 213w 25 50 75 100 125 150 t c (c) 0 100 200 300 400 500 600 p t o t ( w ) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) i square wave: v cc diode as specified 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) fig. 3 - power dissipation vs. case temperature 1 10 100 1000 10000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 1msec 10sec 100sec tc = 25c tj = 150c single pulse dc fig. 4 - forward soa t c = 25c, t j ? 150c, v ge =15v fig. 2 - maximum dc collector current vs. case temperature 25 50 75 100 125 150 t c (c) 0 25 50 75 100 125 i c ( a ) http://www..net/ datasheet pdf - http://www..net/
4 www.irf.com ? 2013 international rectifier april 16, 2013 ? IRG7PSH54K10DPBF fig. 10 - typical v ce vs. v ge t j = -40c 0 1 2 3 4 5 6 7 8 9 10 v ce (v) 0 40 80 120 160 200 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v 0 2 4 6 8 10 v ce (v) 0 40 80 120 160 200 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s 0 1 2 3 4 5 6 7 8 9 10 v ce (v) 0 40 80 120 160 200 i c e ( a ) vge = 18v vge = 15v vge = 12v vge = 10v vge = 9.0v vge = 8.0v fig. 8 - typ. igbt output characteristics t j = 150c; tp = 20s fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20s 0.0 2.0 4.0 6.0 8.0 10.0 v f (v) 0 40 80 120 160 200 i f ( a ) t j =150c t j = 25c tj = -40c 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a fig. 9 - typ. diode forward characteristics tp = 20s 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a fig. 11 - typical v ce vs. v ge t j = 25c http://www..net/ datasheet pdf - http://www..net/
5 www.irf.com ? 2013 international rectifier april 16, 2013 ? IRG7PSH54K10DPBF fig. 17 - typ. switching time vs. rg t j = 150c; v ce = 600v, i ce = 50a; v ge = 15v 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 10 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a 0 255075100 i c (a) 1 3 5 7 9 11 13 15 17 19 e n e r g y ( m j ) e off e on fig. 14 - typ. energy loss vs. i c t j = 150c; v ce = 600v, r g = 5 ? ; v ge = 15v fig. 12 - typical v ce vs. v ge t j = 150c 4 6 8 10 12 14 v ge, gate-to-emitter voltage (v) 0 40 80 120 160 200 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c tj = 150c 0 25 50 75 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20s fig. 15 - typ. switching time vs. i c t j = 150c; v ce = 600v, r g = 5 ? ; v ge = 15v 0 20 40 60 80 100 120 r g ( ? ) 4 6 8 10 12 14 16 18 e n e r g y ( m j ) e off e on fig. 16 - typ. energy loss vs. rg t j = 150c; v ce = 600v, i ce = 50a; vge = 15v 0 20 40 60 80 100 r g ( ? ) 1 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on http://www..net/ datasheet pdf - http://www..net/
6 www.irf.com ? 2013 international rectifier april 16, 2013 ? IRG7PSH54K10DPBF 0 25 50 75 100 125 r g ( ? ) 8 12 16 20 24 28 i r r ( a ) ? irg7ph50k10dpbf/irg7ph50k10d-epbf fig. 21 - typ. diode q rr vs. dif/dt v cc = 600v; v ge = 15v; t j = 150c fig. 22 - typ. diode e rr vs. i f t j = 150c 8 12 16 20 24 28 32 i f (a) 5 10 15 20 25 30 i r r ( a ) r g = ?? r g = 47 ? r g = 10 ? r g = 100 ? fig. 18 - typ. diode i rr vs. i f t j = 150c fig. 20 - typ. diode i rr vs. dif/dt v cc = 600v; v ge = 15v; i f = 16a; t j = 150c 0 100 200 300 400 500 di f /dt (a/s) 8 12 16 20 24 28 i r r ( a ) 50 100 150 200 250 300 350 400 450 di f /dt (a/s) 1000 1400 1800 2200 2600 3000 3400 q r r ( n c ) ?? ??? ???? ??? 8a 32a 16a fig. 19 - typ. diode i rr vs. r g t j = 150c 4 12 20 28 36 i f (a) 100 200 300 400 500 600 700 800 900 1000 e n e r g y ( j ) r g =10 ? r g = ?? r g = 47 ? r g = 100 ? 9 10111213141516 v ge (v) 5 10 15 20 25 30 35 40 t i m e ( s ) 100 150 200 250 300 350 400 450 c u r r e n t ( a ) t sc i sc fig. 23 - v ce vs. short circuit time v cc = 600v; t c = 150c http://www..net/ datasheet pdf - http://www..net/
7 www.irf.com ? 2013 international rectifier april 16, 2013 ? IRG7PSH54K10DPBF 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 50 100 150 200 250 300 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 25 - typical gate charge vs. v ge i ce = 50a fig. 26 maximum transient thermal impedance, junction-to-case (igbt) ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri ? (c/w) ?? i ? (sec) ? 0.0030 0.00001 0.0606 0.00026 0.1091 0.00472 0.0667 0.02724 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 27 maximum transient thermal impedance, junction-to-case (diode) ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 ri ? (c/w) ?? i ? (sec) ? 0.0259 0.00009 0.2435 0.00038 0.2877 0.00539 0.1431 0.03019 http://www..net/ datasheet pdf - http://www..net/
8 www.irf.com ? 2013 international rectifier april 16, 2013 ? IRG7PSH54K10DPBF fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.3 - s.c. soa circuit fig.c.t.4 - switching loss circuit fig.c.t.5 - resistive load circuit fig.c.t.6 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - dc 4x dut vcc r sh l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sense 100k dut 0.0075f d1 22k e force c force e sense http://www..net/ datasheet pdf - http://www..net/
9 www.irf.com ? 2013 international rectifier april 16, 2013 ? IRG7PSH54K10DPBF fig. wf1 - typ. turn-off loss waveform @ tj = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ tj = 150c using fig. ct.4 fig. wf4 - typ. s.c. waveform @ tj = 150c using fig. ct.3 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -0.500.511.5 i ce (a) v ce (v) time(s) 90% i ce 10% v ce 10% i ce eoff loss tf -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 i ce (a) v ce (v) time (s) test current 90% i ce 10% v ce 10% i ce tr eon loss -30 -20 -10 0 10 20 -0.20 -0.05 0.10 0.25 0.40 0.55 i f (a) time (s) peak i rr t rr q rr -100 0 100 200 300 400 500 600 700 -100 0 100 200 300 400 500 600 700 -20.00 -10.00 0.00 10.00 ice (a) vce (v) time (us) vc ice http://www..net/ datasheet pdf - http://www..net/
10 www.irf.com ? 2013 international rectifier april 16, 2013 ? IRG7PSH54K10DPBF super -247(to-274aa) package outline dimensions are shown in millimeters (inches) super -247 (to-274aa)part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ super -247 package is not recommended for surface mount application. assembly lot code top example: this is an irfps37n50a with assembly lot code 1789 international rectifier logo 89 irfps37n50a 17 part number assembled on ww 19, 1997 in the assembly line "c" note: "p" in assembly line position indicates "lead-free" 719c date code year 7 = 1997 week 19 line c http://www..net/ datasheet pdf - http://www..net/
11 www.irf.com ? 2013 international rectifier april 16, 2013 ? IRG7PSH54K10DPBF qualification information ? qualification level industrial (per jedec jesd47f) ?? super-247 n/a rohs compliant yes moisture sensitivity level ?? data and specifications subject to change without notice. ir world headquarters: 101n sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability/ ?? applicable version of jedec standar d at the time of product release. http://www..net/ datasheet pdf - http://www..net/

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